Sn Doped In 2 S 3 Films Elaborated by Spray Technique
نویسنده
چکیده
Tin doped In2S3 films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. The spraying solution contained indium chloride (InCl3), thiourea [CS(NH2)2] and (SnCl4) at a molar ratio of S/In = 2.5. The deposition was carried out at 350 °C on glass substrates. The Sn doping level was changed with Sn/In = 0-8 % in solution. The effect of Sn concentration on electrical, optical and structural properties of In2S3:Sn thin films have been investigated. Copyright © 2014 IFSA Publishing, S. L.
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